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MRF7S35120HSR3 1 rf device data freescale semiconductor rf power field effect transistor n - channel enhancement - mode lateral mosfet designed for pulsed wideband applications operating at frequencies between 3100 and 3500 mhz. ? typical pulsed performance: v dd = 32 volts, i dq = 150 ma, p out = 120 watts peak (24 watts avg.), pulsed signal, f = 3500 mhz, pulse width = 100 sec, duty cycle = 20% power gain ? 12 db drain efficiency ? 40% ? typical wimax performance: v dd = 32 volts, i dq = 900 ma, p out = 18 watts avg., f = 3500 mhz, 802.16d, 64 qam 3 / 4 , 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf power gain ? 13 db drain efficiency ? 16% rce ? - 33 db (evm ? 2.2% rms) ? capable of handling 10:1 vswr, @ 32 vdc, 3300 mhz, 120 watts peak power ? capable of handling 3 db overdrive @ 32 vdc features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? greater negative gate - source voltage range for improved class c operation ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 6.0, +10 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 79 c, 120 w pulsed, 100 sec pulse width, 20% duty cycle case temperature 72 c, 120 w pulsed, 500 sec pulse width, 10% duty cycle r jc 0.11 0.12 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. MRF7S35120HSR3 3100- 3500 mhz, 120 w peak, 32 v pulsed lateral n - channel rf power mosfet case 465a - 06, style 1 ni - 780s document number: mrf7s35120hs rev. 1, 6/2008 freescale semiconductor technical data ? freescale semiconductor, inc., 2008. all rights reserved.
2 rf device data freescale semiconductor MRF7S35120HSR3 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1c (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc zero gate voltage drain leakage current (v ds = 32 vdc, v gs = 0 vdc) i dss ? ? 1 adc zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 400 adc) v gs(th) 1.2 1.9 2.7 vdc gate quiescent voltage (v dd = 32 vdc, i d = 150 madc, measured in functional test) v gs(q) 1.5 2.4 3 vdc drain- source on - voltage (v gs = 10 vdc, i d = 2.0 adc) v ds(on) 0.1 0.17 0.3 vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 32 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 0.87 ? pf output capacitance (v ds = 32 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 464 ? pf input capacitance (v ds = 32 vdc, v gs = 0 vdc 30 mv(rms)ac @ 1 mhz) c iss ? 214 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 32 vdc, i dq = 150 ma, p out = 120 w peak (24 w avg.), f = 3100 mhz and f = 3500 mhz, pulsed, 100 sec pulse width, 20% duty cycle, 25 ns input rise time power gain g ps 10.5 12 13.5 db drain efficiency d 38 40 ? % input return loss irl ? -15 -8 db pulsed rf performance (in freescale application test fixture, 50 ohm system) v dd = 32 vdc, i dq = 150 ma, p out = 120 w peak (24 w avg.), f = 3100 mhz and f = 3500 mhz, pulsed, 100 sec pulse width, 20% duty cycle, 25 ns input rise time output pulse droop (500 sec pulse width, 10% duty cycle) drp out ? 0.3 ? db load mismatch tolerance (vswr = 10:1 at all phase angles) vswr - t no degradation in output power 1. part internally matched both on input and output.
MRF7S35120HSR3 3 rf device data freescale semiconductor figure 1. MRF7S35120HSR3 test circuit schematic z14 0.390 x 0.576 microstrip z15 0.202 x 0.082 microstrip z16 0.066 x 0.162 microstrip z17 0.084 x 0.330 microstrip z18 0.105 x 0.082 microstrip z19 0.080 x 0.147 microstrip z20 0.366 x 0.082 microstrip z21 0.070 x 0.207 microstrip z23 0.734 x 0.082 microstrip z24 0.071 x 0.477 microstrip pcb arlon cuclad 250gx - 0300- 55 - 22, 0.030 , r = 2.55 * line length includes microstrip bends z1 0.120 x 0.082 microstrip z2* 0.094 x 0.310 microstrip z3* 0.3502 x 0.082 microstrip z4 0.120 x 0.629 microstrip z5, z22 0.050 x 0.082 microstrip z6 0.052 x 0.082 microstrip z7 0.084 x 0.436 microstrip z8 1.142 x 0.082 microstrip z9 0.144 x 0.564 microstrip z10 0.078 x 0.564 microstrip z11 0.048 x 1.349 microstrip z12 0.120 x 0.175 microstrip z13 0.087 x 0.576 microstrip z1 rf input c10 z2 z8 dut c5 rf output v bias v supply c6 c4 z23 r1 z7 c1 + z10 z9 z12 z6 z3 z4 z5 z20 z19 z18 z17 z16 z15 z13 z14 z24 + c3 + c2 + z11 b1 c8 + c9 + c7 z22 z21 table 5. MRF7S35120HSR3 test circuit component designations and values part description part number manufacturer b1 47 , 100 mhz short ferrite bead 2743019447 fair- rite c1 470 f, 63 v electrolytic capacitor 477kxm063m illinois cap. c2 47 f, 50 v electrolytic capacitor 476kxm050m illinois cap. c3, c4 22 f, 35 v tantalum capacitors t491x226k035at kemet c5 3.3 pf chip capacitor atc100b3r3ct500xt atc c6, c7, c10 2.7 pf chip capacitors atc100b2r7bt500xt atc c8, c9 22 f, 25 v tantalum capacitors ecs - t1ed226r panasonic te series r1 51 , 1/4 w chip resistor crcw120651r0fkea vishay
4 rf device data freescale semiconductor MRF7S35120HSR3 figure 2. MRF7S35120HSR3 test circuit component layout cut out area c9 c8 c7 b1 r1 c10 c6 c1 c3 c4 c5 c2 mrf7s35120hs rev. 3a
MRF7S35120HSR3 5 rf device data freescale semiconductor typical characteristics 35 0.1 1000 020 10 v ds , drain?source voltage (volts) figure 3. capacitance versus drain - source voltage c, capacitance (pf) 30 c iss 1 100 1 t c = 25 c 10 10 v ds , drain?source voltage (volts) figure 4. dc safe operating area i d , drain current (amps) 10 1 c oss c rss measured with 30 mv(rms)ac @ 1 mhz v gs = 0 vdc 100 t j = 200 c t j = 150 c t j = 175 c 13 3 5 10 12 11 50 41 32 23 p out , output power (watts) pulsed figure 5. pulsed power gain and drain efficiency versus output power g ps , power gain (db) d, drain efficiency (%) 8 200 48 56 36 55 54 p in , input power (dbm) pulsed figure 6. pulsed output power versus input power 53 52 51 50 38 39 40 41 42 45 p out , output power (dbm) pulsed p3db = 52 dbm (157 w) actual ideal p2db = 51.7 dbm (149 w) 8 14 1 13 12 p out , output power (watts) pulsed figure 7. pulsed power gain versus output power g ps , power gain (db) 10 11 i dq = 1000 ma 200 150 ma figure 8. pulsed power gain versus output power p out , output power (watts) pulsed g ps , power gain (db) v dd = 24 v 6 13 3 7 12 26 v 11 10 200 49 10 10 9 500 ma 300 ma 10 9 8 v dd = 32 vdc, i dq = 150 ma pulse width = 100 sec duty cycle = 20% i dq = 150 ma, f = 3500 mhz pulse width = 100 sec duty cycle = 20% v dd = 32 vdc, i dq = 150 ma, f = 3500 mhz pulse width = 100 sec, duty cycle = 20% v dd = 32 vdc, f = 3500 mhz pulse width = 100 sec, duty cycle = 20% 100 525 15 9 100 14 g ps f = 3500 mhz d 3300 mhz 3100 mhz 37 43 44 p1db = 51.3 dbm (135 w) 100 100 28 v 30 v 32 v
6 rf device data freescale semiconductor MRF7S35120HSR3 typical characteristics 25 0 250 015 5 150 100 p in , input power (watts) pulsed figure 9. pulsed output power versus input power p out , output power (watts) pulsed 10 20 200 6 15 1 0 60 100 50 30 p out , output power (watts) pulsed figure 10. pulsed power gain and drain efficiency versus output power ? 3100 mhz g ps , power gain (db) d, drain efficiency (%) 13.5 300 25 c t c = ?30 c 85 c 40 12 10.5 v dd = 32 vdc, i dq = 150 ma pulse width = 100 sec, duty cycle = 20% v dd = 32 vdc, i dq = 150 ma, f = 3100 mhz pulse width = 100 sec, duty cycle = 20% 50 3100 mhz ?30 c 3300 mhz ?30 c 3100 mhz 25 c 3500 mhz ?30 c 3300 mhz 25 c 3500 mhz 25 c 3100 mhz 85 c 3300 mhz 85 c 3500 mhz 85 c 9 7.5 10 20 10 g ps d ?30 c 85 c 6 15 1 0 60 100 50 30 p out , output power (watts) pulsed figure 11. pulsed power gain and drain efficiency versus output power ? 3300 mhz g ps , power gain (db) d, drain efficiency (%) 13.5 300 25 c t c = ?30 c 85 c 40 12 10.5 v dd = 32 vdc, i dq = 150 ma, f = 3300 mhz pulse width = 100 sec, duty cycle = 20% 9 7.5 10 20 10 g ps d ?30 c 85 c 25 c 25 c 6 15 1 0 60 100 50 30 p out , output power (watts) pulsed figure 12. pulsed power gain and drain efficiency versus output power ? 3500 mhz g ps , power gain (db) d, drain efficiency (%) 13.5 300 25 c t c = ?30 c 85 c 40 12 10.5 v dd = 32 vdc, i dq = 150 ma, f = 3500 mhz pulse width = 100 sec, duty cycle = 20% 9 7.5 10 20 10 g ps d ?30 c 85 c 25 c
MRF7S35120HSR3 7 rf device data freescale semiconductor typical characteristics 10 14 3100 ?36 43 42 40 f, frequency (mhz) figure 13. pulsed power gain, drain efficiency and irl versus frequency g ps , power gain (db) d, drain efficiency (%) 13.5 41 12 11.5 v dd = 32 vdc, i dq = 150 ma, p out = 120 w pulse width = 100 sec, duty cycle = 20% 11 10.5 ?27 g ps d 13 12.5 3150 3200 3250 3300 3350 3400 3450 3500 ?18 ?9 irl, input return loss (db) irl 13 gain (db) 41 g ps p out , output power (dbm) figure 14. single - channel ofdm relative constellation error, drain efficiency and gain versus output power 12.8 13.6 13.4 13.2 ?38 ?28 ?29 ?30 11 21 20 19 18 16 15 14 13 d , drain efficiency (%) d rce (relative constellation error (db) ?31 ?32 ?34 ?35 ?36 ?37 41.5 42 42.5 43 43.5 44 17 12 12.6 rce ?33 250 10 10 90 t j , junction temperature ( c) figure 15. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 32 vdc, p out = 120 w peak, pulse width = 100 sec, duty cycle = 20%, and d = 40%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 9 10 8 10 7 110 130 150 170 190 mttf (hours) 210 230 v dd = 32 vdc, i dq = 900 ma, f = 3500 mhz single?carrier ofdm 802.16d, 64 qam 3 / 4 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf
8 rf device data freescale semiconductor MRF7S35120HSR3 z o = 25 z load f = 3500 mhz f = 2900 mhz z source f = 2900 mhz f = 3500 mhz v dd = 32 vdc, i dq = 150 ma, p out = 120 w peak f mhz z source z load 2900 0.825 - j4.72 6.03 - j0.487 3100 1.1 - j6.74 4.63 - j0.0472 3300 3.95 - j10.8 2.65 - j1.44 3500 18 - j1.1 3.65 - j2.56 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 16. series equivalent source and load impedance z source z load input matching network device under test output matching network
MRF7S35120HSR3 9 rf device data freescale semiconductor package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.805 0.815 20.45 20.70 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 m 0.774 0.786 19.61 20.02 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 5. source 1 2 d k c e h f 3 u (flange) 4x z (lid) 4x bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.005 ref 0.127 ref s 0.365 0.375 9.27 9.52 n 0.772 0.788 19.61 20.02 u ??? 0.040 ??? 1.02 z ??? 0.030 ??? 0.76 m a m bbb b m t b b (flange) 2x seating plane m a m ccc b m t m a m bbb b m t a a (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator) case 465a - 06 issue h ni - 780s
10 rf device data freescale semiconductor MRF7S35120HSR3 product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 0 may 2008 ? initial release of data sheet 1 june 2008 ? corrected p out error and changed from 42.5 watts to 18 watts, typical wimax performance bullet, p. 1
MRF7S35120HSR3 11 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or +1 - 303- 675- 2140 fax: +1 - 303- 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf7s35120hs rev. 1, 6/2008

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